FQB33N10L mosfet equivalent, n-channel mosfet.
* 33 A, 100 V, RDS(on) = 52 mΩ (Max) @VGS = 10 V, ID = 16.5 A
* Low Gate Charge (Typ. 30 nC)
* Low Crss (Typ. 70 pF)
* 100% Avalanche Tested
* 175°C M.
Features
* 33 A, 100 V, RDS(on) = 52 mΩ (Max) @VGS = 10 V, ID = 16.5 A
* Low Gate Charge (Typ. 30 nC)
* Lo.
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