FQB34N20L Datasheet (Fairchild Semiconductor)

FQB34N20L - 200V LOGIC N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i

FQB34N20L Features

* 31A, 200V, RDS(on) = 0.075Ω @VGS = 10 V Low gate charge ( typical 55 nC) Low Crss ( typical 52 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct opration from logic

FQB34N20L Datasheet - Fairchild Semiconductor

FQB34N20L - 200V LOGIC N-Channel MOSFET

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