Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
∆BVDSS Breakdown Voltage Temperature
/ ∆TJ Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = -250 µA
ID = -250 µA, Referenced to 25°C
VDS = -100 V, VGS = 0 V
VDS = -80 V, TC = 150°C
VGS = -25 V, VDS = 0 V
VGS = 25 V, VDS = 0 V
-100
--
--
--
--
--
--
-0.1
--
--
--
--
--
--
-1
-10
-100
100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = -250 µA
-2.0 --
-4.0
VGS = -10 V, ID = -16.75 A
-- 0.049 0.06
VDS = -40 V, ID = -16.75 A (Note 4) --
23
--
V
Ω
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 2240 2910
-- 730 950
-- 170 220
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = -50 V, ID = -33.5 A,
RG = 25 Ω
(Note 4, 5)
VDS = -80 V, ID = -33.5 A,
VGS = -10 V
(Note 4, 5)
--
--
--
--
--
--
--
25 60
250 510
160 330
210 430
85 110
15 --
45 --
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -33.5 A
trr Reverse Recovery Time
VGS = 0 V, IS = -33.5 A,
Qrr Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L =3.9mH, IAS = -33.5A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -33.5A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
--
--
--
--
--
--
--
--
160
0.88
-33.5
-134
-4.0
--
--
A
A
V
ns
µC
FQB34P10TM_F085 Rev. C1
2 www.fairchildsemi.com
