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FQB34P10TM_F085 Datasheet - Fairchild Semiconductor

FQB34P10TM_F085 100V P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQB34P10TM_F085 Features

* -33.5A, -100V, RDS(on) = 0.06Ω @VGS = -10 V

* Low gate charge ( typical 85 nC)

* Low Crss ( typical 170 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* 175°C maximum junction temperature rating

* Qualified t

FQB34P10TM_F085-FairchildSemiconductor.pdf