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Fairchild Semiconductor Electronic Components Datasheet

FQB34P10TM_F085 Datasheet

100V P-Channel MOSFET

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FQB34P10TM_F085
100V P-Channel MOSFET
March 2012
QFET TM
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
• -33.5A, -100V, RDS(on) = 0.06@VGS = -10 V
• Low gate charge ( typical 85 nC)
• Low Crss ( typical 170 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
Qualified to AEC Q101
• RoHS Compliant
D
G!
GS
D2-PAK
FQB Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
(Note 3)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
S
!
▶▲
!
D
FQB34P10TM_F085
-100
-33.5
-23.5
-134
± 25
2200
-33.5
15.5
-6.0
3.75
155
1.03
-55 to +175
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient *
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ Max Units
-- 0.97 °C/W
-- 40 °C/W
-- 62.5 °C/W
©2012 Fairchild Semiconductor Corporation
FQB34P10TM_F085 Rev. C1
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FQB34P10TM_F085 Datasheet

100V P-Channel MOSFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = -250 µA
ID = -250 µA, Referenced to 25°C
VDS = -100 V, VGS = 0 V
VDS = -80 V, TC = 150°C
VGS = -25 V, VDS = 0 V
VGS = 25 V, VDS = 0 V
-100
--
--
--
--
--
--
-0.1
--
--
--
--
--
--
-1
-10
-100
100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = -250 µA
-2.0 --
-4.0
VGS = -10 V, ID = -16.75 A
-- 0.049 0.06
VDS = -40 V, ID = -16.75 A (Note 4) --
23
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 2240 2910
-- 730 950
-- 170 220
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = -50 V, ID = -33.5 A,
RG = 25
(Note 4, 5)
VDS = -80 V, ID = -33.5 A,
VGS = -10 V
(Note 4, 5)
--
--
--
--
--
--
--
25 60
250 510
160 330
210 430
85 110
15 --
45 --
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -33.5 A
trr Reverse Recovery Time
VGS = 0 V, IS = -33.5 A,
Qrr Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L =3.9mH, IAS = -33.5A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD -33.5A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
--
--
--
--
--
--
--
--
160
0.88
-33.5
-134
-4.0
--
--
A
A
V
ns
µC
FQB34P10TM_F085 Rev. C1
2 www.fairchildsemi.com


Part Number FQB34P10TM_F085
Description 100V P-Channel MOSFET
Maker Fairchild Semiconductor
Total Page 8 Pages
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