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*
*
*
*
*
* 33A, 100V, RDS(on) = 0.052Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 62 pF) Fast switching. 100% avalanch.

such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D TM Features
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* <.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQB33N10L

FQB30N06

FQB30N06L

FQB34N20

FQB34N20L

FQB34P10

FQB34P10TM_F085

FQB3N25

FQB3N30

FQB3N40

FQB3N60

FQB3N60C

FQB3N80