*
*
*
*
*
*
* -47A, -60V, RDS(on) = 0.026Ω @VGS = -10 V Low gate charge ( typical 84 nC) Low Crss ( typical 320 pF) Fast switching 100% avalan.

such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operate.

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQB44N08

FQB44N10

FQB45N15V2

FQB46N15

FQB4N20

FQB4N20L

FQB4N25

FQB4N50

FQB4N60

FQB4N80

FQB4N90

FQB4P25

FQB4P40