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* 3.8A, 200V, RDS(on) = 1.35Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanc.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching pe.

FQB4N20

FQB4N25

FQB4N50

FQB4N60

FQB4N80

FQB4N90

FQB44N08

FQB44N10

FQB45N15V2

FQB46N15

FQB47P06

FQB4P25

FQB4P40