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* 3.9A, 800V, RDS(on) = 3.6Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 8.6 pF) Fast switching 100% avalanche teste.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQB4N20

FQB4N20L

FQB4N25

FQB4N50

FQB4N60

FQB4N90

FQB44N08

FQB44N10

FQB45N15V2

FQB46N15

FQB47P06

FQB4P25

FQB4P40