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* 4.2A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V Low gate charge ( typically 24 nC) Low Crss ( typically 9.5 pF) Fast switching 100% avalanche.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQB4N20

FQB4N20L

FQB4N25

FQB4N50

FQB4N60

FQB4N80

FQB44N08

FQB44N10

FQB45N15V2

FQB46N15

FQB47P06

FQB4P25

FQB4P40