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FQG4904 Datasheet 400v Dual N & P-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQG4904 QFET FQG4904 400V Dual N & P-Channel MOSFET General.

General Description

These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for electronic lamp ballast based on half bridge.

Key Features

  • N-Channel 0.46A, 400V, RDS(on) = 3.0 Ω @ VGS = 10 V P-Channel -0.46A, -400V, RDS(on) = 3.0 Ω @ VGS = -10 V.
  • Low gate charge ( typical N-Channel 7.6 nC) ( typical P-Channel 20.0 nC).
  • Fast switching.
  • Improved dv/dt capability D2 D2 D1 D1 G2 S2 G1 S1 Pin #1 5 4 6 3 7 2 8-DIP 8 1 Absolute Maximum Ratings Symbol VDSS ID IDM VGSS dv/dt PD TJ, TSTG TA = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TA = 25°C) Drain Current - C.

More Datasheets from Fairchild (now onsemi)

Part Number Description
FQG4902 250V Dual N & P-Channel MOSFET

FQG4904 Distributor