FQG4904 Overview
Key Specifications
Max Operating Temp: 150 °C
Description
These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- N-Channel 0.46A, 400V, RDS(on) = 3.0 Ω @ VGS = 10 V P-Channel -0.46A, -400V, RDS(on) = 3.0 Ω @ VGS = -10 V
- Low gate charge ( typical N-Channel 7.6 nC) ( typical P-Channel 20.0 nC)
- Fast switching
