* N-Channel 0.46A, 400V, RDS(on) = 3.0 Ω @ VGS = 10 V P-Channel -0.46A, -400V, RDS(on) = 3.0 Ω @ VGS = -10 V
* Low gate charge ( typical N-Channel 7.6 nC) ( typic.

These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide supe.

FQG4902

FQ08E

FQ1216ME

FQ1216MEMK5

FQA020ADC-007-M

FQA020ADC-007-S

FQA020ADC-N07-S

FQA10N60C

FQA10N80

FQA10N80C

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