FQI12P20 mosfet equivalent, 200v p-channel mosfet.
*
*
*
*
*
* -11.5A, -200V, RDS(on) = 0.47Ω @VGS = -10 V Low gate charge ( typical 31 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche t.
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.
Image gallery
TAGS
Download (Size : 632.87KB)