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FQI13N06L Datasheet, Fairchild Semiconductor

FQI13N06L Datasheet, Fairchild Semiconductor

FQI13N06L

datasheet Download (Size : 666.59KB)

FQI13N06L Datasheet

FQI13N06L mosfet equivalent, 60v logic n-channel mosfet.

FQI13N06L

datasheet Download (Size : 666.59KB)

FQI13N06L Datasheet

Features and benefits


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* 13.6A, 60V, RDS(on) = 0.11Ω @VGS = 10 V Low gate charge ( typical 4.8 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanch.

Application

such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operat.

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

Image gallery

FQI13N06L Page 1 FQI13N06L Page 2 FQI13N06L Page 3

TAGS

FQI13N06L
60V
LOGIC
N-Channel
MOSFET
Fairchild Semiconductor

Manufacturer


Fairchild Semiconductor

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