*
*
*
*
*
*
* 12.8A, 100V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanch.

such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D TM Features
*
* <.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQI13N10L

FQI13N06

FQI13N06L

FQI13N50

FQI13N50C

FQI10N20

FQI10N20C

FQI10N20L

FQI10N60C

FQI11N40

FQI11N40C

FQI11P06

FQI12N20L