900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Fairchild Semiconductor Electronic Components Datasheet

FQI19N10 Datasheet

100V N-Channel MOSFET

No Preview Available !

FQB19N10 / FQI19N10
100V N-Channel MOSFET
August 2000
QFETTM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
• 19A, 100V, RDS(on) = 0.1@VGS = 10 V
• Low gate charge ( typical 19 nC)
• Low Crss ( typical 32 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
D
GS
D2-PAK
FQB Series
GDS
I2-PAK
FQI Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
D
!
"
!"
G!
"
"
!
S
FQB19N10 / FQI19N10
100
19
13.5
76
± 25
220
19
7.5
6.0
3.75
75
0.5
-55 to +175
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJC
RθJA
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ Max Units
-- 2.0 °C/W
-- 40 °C/W
-- 62.5 °C/W
©2000 Fairchild Semiconductor International
Rev. A, August 2000


Fairchild Semiconductor Electronic Components Datasheet

FQI19N10 Datasheet

100V N-Channel MOSFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 100 V, VGS = 0 V
VDS = 80 V, TC = 150°C
VGS = 25 V, VDS = 0 V
VGS = -25 V, VDS = 0 V
100
--
--
--
--
--
--
0.1
--
--
--
--
--
--
1
10
100
-100
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 9.5 A
VDS = 40 V, ID = 9.5 A (Note 4)
2.0 --
-- 0.078
-- 12
4.0
0.1
--
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 600 780
-- 165 215
-- 32
40
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 50 V, ID = 19 A,
RG = 25
-- 7.5
25
-- 150 310
-- 20
50
(Note 4, 5)
--
65
140
VDS = 80 V, ID = 19 A,
VGS = 10 V
(Note 4, 5)
--
--
--
19
3.9
9.0
25
--
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 19
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 76
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 19 A
-- -- 1.5
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 19 A,
dIF / dt = 100 A/µs
-- 78
(Note 4) -- 200
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.9mH, IAS = 19A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 19A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
nC
©2000 Fairchild Semiconductor International
Rev. A, August 2000


Part Number FQI19N10
Description 100V N-Channel MOSFET
Maker Fairchild Semiconductor
Total Page 9 Pages
PDF Download

FQI19N10 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 FQI19N10 100V N-Channel MOSFET
Fairchild Semiconductor
2 FQI19N10L 100V LOGIC N-Channel MOSFET
Fairchild Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy