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* 19A, 100V, RDS(on) = 0.1Ω @VGS = 10 V Low gate charge ( typical 14 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche t.

such as high efficiency switching DC/DC converters, and DC motor control. TM Features
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These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQI19N10

FQI19N20

FQI19N20C

FQI19N20L

FQI10N20

FQI10N20C

FQI10N20L

FQI10N60C

FQI11N40

FQI11N40C

FQI11P06

FQI12N20L

FQI12N50