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* 3.0A, 600V, RDS(on) = 3.6Ω @VGS = 10 V Low gate charge ( typical 10 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalanche teste.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQP3N60C

FQP3N25

FQP3N30

FQP3N40

FQP3N50C

FQP3N80

FQP3N80C

FQP3N90

FQP30N06

FQP30N06L

FQP32N12V2

FQP32N20C

FQP33N10