FQP3N30 Datasheet - Fairchild Semiconductor

300V N-Channel MOSFET

FQP3N30 Features

* 3.2 A, 300 V, RDS(on) = 2.2 Ω (Max.) @ VGS = 10 V, ID = 1.6 A

* Low Gate Charge (Typ. 5.5 nC)

* Low Crss (Typ. 6 pF)

* 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD

FQP3N30 General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQP3N30 Datasheet (673.84 KB)

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Datasheet Details

Part number:

FQP3N30

Manufacturer:

Fairchild Semiconductor

File Size:

673.84 KB

Description:

300v n-channel mosfet.

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FQP3N30 300V N-Channel MOSFET Fairchild Semiconductor

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FQP3N30 Features

FQP3N30 General Description

Datasheet Details

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Description:

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