FQP3P20 mosfet equivalent, 200v p-channel mosfet.
* -2.8 A, -200 V, RDS(on) = 2.7 Ω (Max.) @ VGS = -10 V, ID = -1.4 A
* Low Gate Charge (Typ. 6 nC)
* Low Crss (Typ 7.5 pF)
* 100% Avalanche Tested
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GDS
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Features
* -2.8 A, -200 V, RDS(on) = 2.7 Ω (Max.) @ VGS = -10 V, ID = -1.4 A
* Low Gate Charge (Typ. 6 nC)
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.
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