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* 18A, 200V, RDS(on) = 0.14Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested.

such as automotive, high efficiency switching for DC/DC converters, and DC motor control. TM Features
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These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQPF18N50V2

FQPF10N20

FQPF10N20C

FQPF10N50CF

FQPF10N60

FQPF10N60C

FQPF10N60CF

FQPF10N65

FQPF11N40

FQPF11N40C

FQPF11N50CF

FQPF11P06

FQPF12N20