FQT13N06L Datasheet (Fairchild Semiconductor)

FQT13N06L - 60V LOGIC N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i

FQT13N06L Features

* 2.8A, 60V, RDS(on) = 0.11Ω @VGS = 10 V Low gate charge ( typical 4.8 nC) Low Crss ( typical 17 pF) Fast switching Improved dv/dt capability D ! D " S G G! ! " " " SOT-223 FQT Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IA

FQT13N06L Datasheet - Fairchild Semiconductor

FQT13N06L - 60V LOGIC N-Channel MOSFET

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