H11F2 Datasheet (PDF) Download
Fairchild Semiconductor
H11F2

Description

The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector.

Key Features

  • As a remote variable resistor
  • Extremely low offset voltage
  • 60 Vpk-pk signal capability
  • No charge injection or latch-up
  • ton, toff ≤ 15 µS
  • UL recognized (File #E90700)