H11F2
Description
The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals.
Key Features
- ≤ 100Ω to ≥ 300 MΩ
- ≥ 99.9% linearity
- ≤ 15 pF shunt capacitance
- ≥ 100 GΩ I/O isolation resistance As an analog switch
- Extremely low offset voltage
- 60 Vpk-pk signal capability
- No charge injection or latch-up
- ton, toff ≤ 15 µS
- UL recognized (File #E90700)
- VDE recognized (File #E94766) - Ordering option ‘300’ (e.g. H11F1.300)
