H11F2
Description
The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector.
Key Features
- As a remote variable resistor
- Extremely low offset voltage
- 60 Vpk-pk signal capability
- No charge injection or latch-up
- ton, toff ≤ 15 µS
- UL recognized (File #E90700)