H11F2 Datasheet PDF - Fairchild Semiconductor PHOTO FET OPTOCOUPLERS Specs

H11F2 - PHOTO FET OPTOCOUPLERS

Datasheet Summary

Description

The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector.

Features

As a remote variable resistor.
≤ 100Ω to ≥ 300 MΩ.
≥ 99.9% linearity.
≤ 15 pF shunt capacitance.
≥ 100 GΩ I/O isolation resistance As an analog switch.
Extremely low offset voltage.
60 Vpk-pk signal capability.
No charge injection or latch-up.
ton, toff ≤ 15 µS.
UL recognized (File #E90700).
VDE recognized (File #E94766).
Ordering option ‘300’ (e. g. H11F1.300).

Datasheet Details

Part number	H11F2
Manufacturer	Fairchild Semiconductor
File Size	403.30 KB
Description	PHOTO FET OPTOCOUPLERS
Datasheet	H11F2 Datasheet
Additional preview pages of the H11F2 datasheet.

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Full PDF Text Transcription

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PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE SCHEMATIC ANODE 1 6 OUTPUT TERM. 6 1 6 CATHODE 2 5 1 3 4 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages. FEATURES As a remote variable resistor • ≤ 100Ω to ≥ 300 MΩ • ≥ 99.

Published: Mar 23, 2005 |