H11F2 Datasheet | Fairchild Semiconductor

DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages. FEATURES As a remote variable resistor - ≤ 100Ω to ≥ 300 MΩ - ≥ 99.9% linearity - ≤ 15 p F shunt capacitance - ≥ 100 GΩ I/O isolation resistance As an analog switch - Extremely low offset voltage - 60 Vpk-pk signal capability - No charge injection or latch-up - ton, toff ≤ 15 µS - UL recognized (File #E90700) - VDE recognized (File #E94766) - Ordering option ‘300’ (e.g. H11F1.300) APPLICATIONS As a variable resistor - - Isolated variable attenuator - Automatic gain control - Active filter fine tuning/band switching As an analog switch - - Isolated sample and hold circuit - Multiplexed, optically isolated A/D conversion © 2002 Fairchild Semiconductor Corporation Page 1 of 9 6/24/02 PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 Absolute Maximum Ratings (TA = 25°C unless otherwise specified) Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature EMITTER Continuous Forward Current Reverse Voltage Forward Current - Peak (10 µs pulse, 1% duty cycle) LED Power Dissipation 25°C Ambient Derate Linearly From 25°C DETECTOR Detector Power Dissipation @ 25°C Derate linearly from 25°C Breakdown Voltage (either polarity) Continuous Detector Current (either polarity) PD BV4-6 I4-6 All H11F1, H11F2 H11F3 All 300 4.0 ±30 ±15 ±100 m W m W/°C V V m A IF VR IF(pk) PD All All All All 60 5 1 100 1.33 m A V A m W m W/°C TSTG TOPR TSOL All All All -55 to +150 -55 to +100 260 for 10 sec °C °C °C Symbol Device Value Units ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.) INDIVIDUAL PONENT CHARACTERISTICS Parameter EMITTER Input Forward Voltage Reverse Leakage Current Capacitance...