IRFI650B Datasheet - Fairchild Semiconductor

200V N-Channel MOSFET

IRFI650B Features

* 28A, 200V, RDS(on) = 0.085Ω @VGS = 10 V Low gate charge ( typical 95 nC) Low Crss ( typical 75 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

* ◀ ▲

* G S D2-PAK IRFW Series G D S I2-PAK IRFI

IRFI650B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFI650B Datasheet (673.28 KB)

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Datasheet Details

Part number:

IRFI650B

Manufacturer:

Fairchild Semiconductor

File Size:

673.28 KB

Description:

200v n-channel mosfet.

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IRFI650B 200V N-Channel MOSFET Fairchild Semiconductor

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IRFI650B Features

IRFI650B General Description

Datasheet Details

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Description:

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