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IRLW610A - Advanced Power MOSFET

Download the IRLW610A datasheet PDF. This datasheet also covers the IRLI610A variant, as both devices belong to the same advanced power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Avalanche Rugged Technology.
  • Rugged Gate Oxide Technology.
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • 150° C Operating Temperature.
  • Lower Leakage Current: 10µA (Max. ) @ VDS = 200V.
  • Lower RDS(ON): 1.185Ω (Typ. ) IRLW/I610A BVDSS = 200 V RDS(on) = 1.5Ω ID = 3.3 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Chara.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLI610A_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRLW630A Advanced Power MOSFET International Rectifier
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IRL1004L Power MOSFET International Rectifier
IRL1004LPBF Power MOSFET International Rectifier

Other Datasheets by Fairchild (onsemi)

Part Number Description
IRLW620A Power MOSFET
IRLW630A ADVANCED POWER MOSFET
IRLW640A Power MOSFET
IRLW510A ADVANCED POWER MOSFET
IRLW530A HEXFET Power MOSFET

Full PDF Text Transcription

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www.DataSheet4U.com $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 1.185Ω (Typ.) IRLW/I610A BVDSS = 200 V RDS(on) = 1.5Ω ID = 3.3 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3.
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