npn epitaxial silicon darlington transistor.
* Monolithic Construction with Built-in Base-Emitter Shunt Resistors
* High DC Current Gain: hFE = 1000 @ VCE = 4 V, IC = 3 A (Minimum)
* Collector-Emitter Su.
and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and.
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