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PRELIMINARY
• FEATURES (1.8 GHz) ♦ 31 dBm Linear Output Power ♦ 16 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 41 dBm Output IP3 ♦ Maximum Stable Gain of 20 dB ♦ 50% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias
DRAIN BOND PAD (2X)
FPD1000V
1W POWER PHEMT
GATE BOND PAD (2X)
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DESCRIPTION AND APPLICATIONS
DIE SIZE (µm): 650 x 800 DIE THICKNESS: 75µm BONDING PADS (µm): >70 x 65
The FPD1000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands. The FPD1000V includes Source plated thru-vias, and does not require wire bonds to the Source.
FPD1000V Datasheet
