Datasheet Details
| Part number | FPD1050 |
|---|---|
| Manufacturer | Filtronic |
| File Size | 180.59 KB |
| Description | 0.75W POWER PHEMT |
| Download | FPD1050 Download (PDF) |
|
|
| Part number | FPD1050 |
|---|---|
| Manufacturer | Filtronic |
| File Size | 180.59 KB |
| Description | 0.75W POWER PHEMT |
| Download | FPD1050 Download (PDF) |
|
|
|
AND APPLICATIONS The FPD1050 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.25 µm by 1050 µm Schottky barrier gate, defined by high-resolution stepper-based photolithography.
The recessed and offset Gate structure minimizes parasitics to optimize performance.
The epitaxial structure and processing have been optimized for reliable high-power applications.
0.75W POWER PHEMT •.
| Part Number | Description |
|---|---|
| FPD10000AF | 10W PACKAGED POWER PHEMT |
| FPD10000V | 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS |
| FPD1000AS | 1W PACKAGED POWER PHEMT |
| FPD1000V | 1W POWER PHEMT |
| FPD1500DFN | HIGH LINEARITY PACKAGED PHEMTT |
| FPD1500P100 | 1W PACKAGED POWER PHEMT |
| FPD1500SOT89 | HIGH LINEARITY PACKAGED PHEMTT |
| FPD6836 | 0.25W POWER PHEMT |
| FPD6836P70 | LOW NOISE HIGH FREQUENCY PACKAGED PHEMT |
| FPD6836SOT343 | HIGH LINEARITY PACKAGED PHEMT |