FPD1050 Key Features
- 28.5 dBm Linear Output Power at 12 GHz
- 11 dB Power Gain at 12 GHz
- 14 dB Maximum Stable Gain at 12 GHz
- 41 dBm Output IP3
- 45% Power-Added Efficiency
- DESCRIPTION AND
- Part: FPD1050
- Manufacturer: Filtronic
- Size: 180.59 KB
Related Filtronic Datasheets
| Part Number | Description |
|---|---|
| FPD10000AF | 10W PACKAGED POWER PHEMT |
| FPD10000V | 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS |
| FPD1000AS | 1W PACKAGED POWER PHEMT |
| FPD1000V | 1W POWER PHEMT |
| FPD1500DFN | HIGH LINEARITY PACKAGED PHEMTT |
FPD1050 Description
AND APPLICATIONS The FPD1050 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.25 µm by 1050 µm Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications.