Datasheet Details
| Part number | FPD1500DFN |
|---|---|
| Manufacturer | Filtronic |
| File Size | 269.79 KB |
| Description | HIGH LINEARITY PACKAGED PHEMTT |
| Download | FPD1500DFN Download (PDF) |
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| Part number | FPD1500DFN |
|---|---|
| Manufacturer | Filtronic |
| File Size | 269.79 KB |
| Description | HIGH LINEARITY PACKAGED PHEMTT |
| Download | FPD1500DFN Download (PDF) |
|
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: The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT).
It utilizes a 0.25 µm x 750 µm Schottky barrier Gate, defined by high-resolution stepperbased photolithography.
The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels.
FPD1500DFN LOW NOISE HIGH LINEARITY PACKAGED PHEMT.
| Part Number | Description |
|---|---|
| FPD1500P100 | 1W PACKAGED POWER PHEMT |
| FPD1500SOT89 | HIGH LINEARITY PACKAGED PHEMTT |
| FPD10000AF | 10W PACKAGED POWER PHEMT |
| FPD10000V | 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS |
| FPD1000AS | 1W PACKAGED POWER PHEMT |
| FPD1000V | 1W POWER PHEMT |
| FPD1050 | 0.75W POWER PHEMT |
| FPD6836 | 0.25W POWER PHEMT |
| FPD6836P70 | LOW NOISE HIGH FREQUENCY PACKAGED PHEMT |
| FPD6836SOT343 | HIGH LINEARITY PACKAGED PHEMT |