FPD1500DFN datasheet, phemtt equivalent, Filtronic

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FPD1500DFN Features and benefits

(1850MHZ):
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* 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency R.

FPD1500DFN Application

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* Drivers or output stages in PCS/Cellular base station transmitter amplifiers High intercept-point LNA.

FPD1500DFN Description

The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 750 µm Schottky barrier Gate, defined by high-resolution stepperbased photolithography. The recessed and offse.

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