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FPD1500P100 Datasheet 1W PACKAGED POWER PHEMT

Manufacturer: Filtronic

Datasheet Details

Part number FPD1500P100
Manufacturer Filtronic
File Size 186.12 KB
Description 1W PACKAGED POWER PHEMT
Download FPD1500P100 Download (PDF)

General Description

AND APPLICATIONS The FPD1500P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 1500 µm Schottky barrier gate, defined by highresolution stepper-based photolithography.

The recessed and offset Gate structure minimizes parasitics to optimize performance.

The epitaxial structure and processing have been optimized for reliable high-power applications.

Overview

1W PACKAGED POWER PHEMT •.

Key Features

  • S.
  • 29.5 dBm Linear Output Power.
  • 18 dB Power Gain at 2 GHz.
  • 10.5 dB Maximum Stable Gain at 10 GHz.
  • 39 dBm Output IP3.
  • 45% Power-Added Efficiency at 2 GHz FPD1500P100.