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FPD1500P100 Datasheet 1W PACKAGED POWER PHEMT

Manufacturer: Filtronic

Overview: 1W PACKAGED POWER PHEMT •.

Datasheet Details

Part number FPD1500P100
Manufacturer Filtronic
File Size 186.12 KB
Description 1W PACKAGED POWER PHEMT
Download FPD1500P100 Download (PDF)

General Description

AND APPLICATIONS The FPD1500P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 1500 µm Schottky barrier gate, defined by highresolution stepper-based photolithography.

The recessed and offset Gate structure minimizes parasitics to optimize performance.

The epitaxial structure and processing have been optimized for reliable high-power applications.

Key Features

  • S.
  • 29.5 dBm Linear Output Power.
  • 18 dB Power Gain at 2 GHz.
  • 10.5 dB Maximum Stable Gain at 10 GHz.
  • 39 dBm Output IP3.
  • 45% Power-Added Efficiency at 2 GHz FPD1500P100.