FPD1500P100 Key Features
- 29.5 dBm Linear Output Power
- 18 dB Power Gain at 2 GHz
- 10.5 dB Maximum Stable Gain at 10 GHz
- 39 dBm Output IP3
- 45% Power-Added Efficiency at 2 GHz
- DESCRIPTION AND
- Part: FPD1500P100
- Manufacturer: Filtronic
- Size: 186.12 KB
Related Filtronic Datasheets
| Part Number | Description |
|---|---|
| FPD1500DFN | HIGH LINEARITY PACKAGED PHEMTT |
| FPD1500SOT89 | HIGH LINEARITY PACKAGED PHEMTT |
| FPD10000AF | 10W PACKAGED POWER PHEMT |
| FPD10000V | 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS |
| FPD1000AS | 1W PACKAGED POWER PHEMT |
FPD1500P100 Description
AND APPLICATIONS The FPD1500P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 1500 µm Schottky barrier gate, defined by highresolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications.