Datasheet Details
| Part number | FPD1500SOT89 |
|---|---|
| Manufacturer | Filtronic |
| File Size | 423.87 KB |
| Description | HIGH LINEARITY PACKAGED PHEMTT |
| Download | FPD1500SOT89 Download (PDF) |
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| Part number | FPD1500SOT89 |
|---|---|
| Manufacturer | Filtronic |
| File Size | 423.87 KB |
| Description | HIGH LINEARITY PACKAGED PHEMTT |
| Download | FPD1500SOT89 Download (PDF) |
|
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AND APPLICATIONS The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT).
It utilizes a 0.25 x 1500 μm Schottky barrier Gate, defined by highresolution stepper-based photolithography.
The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels.
LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT FPD1500SOT89 • PERFORMANCE (1850 MHz) ♦ 27.5 dBm Output Power (P1dB) ♦ 17 dB Small-Signal Gain (SSG) ♦ 1.
| Part Number | Description |
|---|---|
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| FPD6836SOT343 | HIGH LINEARITY PACKAGED PHEMT |