FPD3000 Key Features
- 32.5 dBm Linear Output Power at 12 GHz
- 6.5 dB Power Gain at 12 GHz
- 8 dB Maximum Stable Gain at 12 GHz
- 42 dBm Output IP3
- 30% Power-Added Efficiency
- DESCRIPTION AND
- Part: FPD3000
- Manufacturer: Filtronic Compound Semiconductors
- Size: 213.66 KB
Related Filtronic Compound Semiconductors Datasheets
| Part Number | Description |
|---|---|
| FPD3000P100 | 2W PACKAGED POWER PHEMT |
| FPD3000SOT89 | HIGH LINEARITY PACKAGED PHEMT |
| FPD750 | 0.5W POWER PHEMT |
| FPD750DFN | LOW NOISE HIGH LINEARITY PACKAGED PHEMT |
| FPD750P100 | 0.5W PACKAGED POWER PHEMT |
FPD3000 Description
AND APPLICATIONS DIE SIZE (µm): >75 x 60 The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 3000 µm Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance.