FPD750P100 Overview
AND APPLICATIONS The FPD750P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 750 µm Schottky barrier gate, defined by high-resolution stepperbased photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications.
FPD750P100 Key Features
- 26.5 dBm Linear Output Power
- 18.5 dB Power Gain at 2 GHz
- 11.5 dB Maximum Stable Gain at 10 GHz
- 36 dBm Output IP3
- 45% Power-Added Efficiency at 2 GHz
- DESCRIPTION AND