Datasheet Details
| Part number | FPD750P100 |
|---|---|
| Manufacturer | Filtronic Compound Semiconductors |
| File Size | 214.15 KB |
| Description | 0.5W PACKAGED POWER PHEMT |
| Datasheet |
 FPD750P100 Datasheet
|
|
|
General Description
The FPD750P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 750 µm Schottky barrier gate, defined by high-resolution stepperbased photolithography.
Key Features
- S.
- 26.5 dBm Linear Output Power.
- 18.5 dB Power Gain at 2 GHz.
- 11.5 dB Maximum Stable Gain at 10 GHz.
- 36 dBm Output IP3.
- 45% Power-Added Efficiency at 2 GHz FPD750P100 www. DataSheet4U. com.