FPD750SOT343
FPD750SOT343 is LOW NOISE HIGH LINEARITY PACKAGED PHEMT manufactured by Filtronic Compound Semiconductors.
Features
(1850MHZ):
- -
- -
- 0.5 d B N.F.min. 20 d Bm Output Power (P1d B) 16.5 d B Small-Signal Gain (SSG) 37 d Bm Output IP3 Ro HS pliant (Directive 2002/95/EC)
Datasheet v3.0
ROHS:
GENERAL DESCRIPTION:
The .. FPD750SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor (p HEMT). It utilizes a 0.25 µm x 750 µm Schottky barrier Gate. The Filtronic 0.25µm process ensures class-leading noise performance. The use of a small footprint plastic package allows for cost effective system implementation.
TYPICAL APPLICATIONS:
- -
- 802.11a,b,g and Wi Max LNAs PCS/Cellular High Linearity LNAs Other types of wireless infrastructure systems.
TYPICAL PERFORMANCE1:
RF PARAMETER
Power at 1d B Gain pression Small Signal Gain Power-Added Efficiency
SYMBOL
OP1d B SSG PAE
CONDITIONS
VDS = 3.3 V; IDS = 40m A VDS = 3.3 V; IDS = 40m A VDS = 3.3 V; IDS = 40m A POUT = P1d B
0.9GHZ 1.85GHZ 2.6GHZ
20 22 50 19 16.5 45 20 14 45
3.5GHZ
20.5 11 50
UNITS d Bm d B %
Maximum Stable Gain (|S21/S12|) Noise Figure Output Third-Order Intercept Point POUT = 9 d Bm per Tone
MSG N.F. OIP3
VDS = 3.3 V; IDS = 40m A VDS = 3.3 V; IDS = 40m A VDS = 3.3V; IDS = 40m A VDS = 3.3V; IDS = 80m A
24 0.5 32 35
20 0.6 31 37
18 0.7 31...
