FPD750SOT343 Description
FPD750SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 750 µm Schottky barrier Gate. The Filtronic 0.25µm process ensures class-leading noise performance.
FPD750SOT343 Key Features
- 0.5 dB N.F.min. 20 dBm Output Power (P1dB) 16.5 dB Small-Signal Gain (SSG) 37 dBm Output IP3 RoHS pliant (Directive 2002