FPD750SOT89 Datasheet | Filtronic Compound Semiconductors

Features (1.85GHZ): - - - - - - Datasheet 3.0 PACKAGE: Ro HS 25 d Bm Output Power (P1d B) 18 d B Small-Signal Gain (SSG) 0.6 d B Noise Figure 39 d Bm Output IP3 55% Power-Added Efficiency FPD750SOT89E: Ro HS pliant (Directive 2002/95/EC) .. GENERAL DESCRIPTION: The FPD750SOT89 is a packaged depletion mode Al Ga As/In Ga As pseudomorphic High Electron Mobility Transistor (p HEMT). It utilizes a 0.25 µm x 750 µm Schottky barrier Gate, defined by high-resolution stepperbased photolithography. The double recessed gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and i/p power levels. TYPICAL APPLICATIONS: - - - Drivers or output stages in PCS/Cellular base station transmitter amplifiers High intercept-point LNAs WLL and WLAN systems, and other types of wireless infrastructure systems. ELECTRICAL SPECIFICATIONS: PARAMETER Power at 1d B Gain pression Small-Signal Gain SYMBOL P1d B SSG CONDITIONS VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS 23 16.5 25 18 UNITS d Bm d B Power-Added Efficiency VDS = 5 V; IDS = 50% IDSS; POUT = P1d B % Noise...