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FPD750SOT89 - LOW NOISE HIGH LINEARITY PACKAGED PHEMT

General Description

The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT).

It utilizes a 0.25 µm x 750 µm Schottky barrier Gate, defined by high-resolution stepperbased photolithography.

Key Features

  • (1.85GHZ):.
  • Datasheet 3.0.

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Datasheet Details

Part number FPD750SOT89
Manufacturer Filtronic Compound Semiconductors
File Size 1.00 MB
Description LOW NOISE HIGH LINEARITY PACKAGED PHEMT
Datasheet download datasheet FPD750SOT89 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FPD750SOT89 LOW NOISE HIGH LINEARITY PACKAGED PHEMT FEATURES (1.85GHZ): • • • • • • Datasheet 3.0 PACKAGE: RoHS 25 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 0.6 dB Noise Figure 39 dBm Output IP3 55% Power-Added Efficiency FPD750SOT89E: RoHS compliant (Directive 2002/95/EC) 9 www.DataSheet4U.com GENERAL DESCRIPTION: The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 750 µm Schottky barrier Gate, defined by high-resolution stepperbased photolithography. The double recessed gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and i/p power levels.