FPD750 Datasheet | Filtronic Compound Semiconductors

Features : - - - - - 27.5 d Bm Linear Output Power at 12 GHz 11.5 d B Power Gain at 12 GHz 14.5 d B Max Stable Gain at 12 GHz 38 d Bm Output IP3 50% Power-Added Efficiency Datasheet v3.0 LAYOUT: GENERAL DESCRIPTION: The .. FPD750 is an Al Ga As/In Ga As pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 750 µm Schottky barrier gate, defined by highresolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FPD750 also Features Si3N4 passivation and is available in the low cost plastic SOT89 SOT343 and DFN packages. TYPICAL APPLICATIONS: - - - - Narrowband and broadband highperformance amplifiers SAT uplink transmitters PCS/Cellular low-voltage high-efficiency output amplifiers Medium-haul digital radio transmitters ELECTRICAL SPECIFICATIONS1: PARAMETER Power at 1d B Gain pression Maximum Stable Gain (S21/S12) Power Gain at P1d B Power-Added Efficiency Output Third-Order Intercept Point IP3 (from 15 to 5 d B below P1d B) Saturated Drain-Source Current Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Gate-Drain Breakdown Voltage Thermal Resistivity (see Notes) IDSS IMAX GM IGSO |VP| |VBDGS| |VBDGD| Matched for optimal power; Tuned for best IP3 VDS = 1.3 V; VGS = 0 V VDS = 1.3 V; VGS ≅ +1 V VDS = 1.3 V; VGS = 0 V VGS = -5 V VDS = 1.3 V; IDS = 0.75 m A IGS = 0.75 m A IGD = 0.75 m A VDS > 6V 12.0 14.5 185 40 230 370 200 10 1.0 14.0 16.0 65 280 d Bm m A m A m S µA V V V °C/W SYMBOL P1d B MSG G1d B PAE CONDITIONS VDS = 8 V; IDS = 50% IDSS VDS = 8 V; IDS = 50% IDSS VDS = 8 V; IDS = 50% IDSS VDS = 8 V; IDS = 50% IDSS; POUT = P1d B VDS = 8V; IDS = 50% IDSS 26.5 13.5 10.5 27.5 14.5 11.5 45 38 UNITS d Bm d B d B % θJC Note: 1TAmbient = 22°C; RF specifications measured at f = 12 GHz using CW signal Specifications...