FPD7612 datasheet by Filtronic Compound Semiconductors.
| Part number | FPD7612 |
|---|---|
| Datasheet | FPD7612_FiltronicCompoundSemiconductors.pdf |
| File Size | 315.60 KB |
| Manufacturer | Filtronic Compound Semiconductors |
| Description | GENERAL PURPOSE PHEMT |
|
|
FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 200 µm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications.
View all Filtronic Compound Semiconductors datasheets
| Part Number | Description |
|---|---|
| FPD7612P70 | HI-FREQUENCY PACKAGED PHEMT |
| FPD750 | 0.5W POWER PHEMT |
| FPD750DFN | LOW NOISE HIGH LINEARITY PACKAGED PHEMT |
| FPD750P100 | 0.5W PACKAGED POWER PHEMT |
| FPD750SOT343 | LOW NOISE HIGH LINEARITY PACKAGED PHEMT |
| FPD750SOT89 | LOW NOISE HIGH LINEARITY PACKAGED PHEMT |
| FPD3000 | 2W POWER PHEMT |
| FPD3000P100 | 2W PACKAGED POWER PHEMT |
| FPD3000SOT89 | HIGH LINEARITY PACKAGED PHEMT |
| FPDA200V | HIGH PERFORMANCE PHEMT WITH SOURCE VIAS |
