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FPD7612 - GENERAL PURPOSE PHEMT

General Description

The www.DataSheet4U.com FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 200 µm Schottky barrier gate, defined by high -resolution stepper-based photolithography.

The recessed gate structure minimizes parasitics to optimize performance.

Key Features

  • 20.5 dBm Output Power (P1dB) 13 dB Power Gain at 12 GHz 17 dB Maximum Stable Gain at 12 GHz 11 dB Maximum Stable Gain at 18 GHz 45% Power-Added Efficiency Datasheet v3.0 LAYOUT:.

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Datasheet Details

Part number FPD7612
Manufacturer Filtronic Compound Semiconductors
File Size 315.60 KB
Description GENERAL PURPOSE PHEMT
Datasheet download datasheet FPD7612 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FPD7612 GENERAL PURPOSE PHEMT FEATURES: • • • • • 20.5 dBm Output Power (P1dB) 13 dB Power Gain at 12 GHz 17 dB Maximum Stable Gain at 12 GHz 11 dB Maximum Stable Gain at 18 GHz 45% Power-Added Efficiency Datasheet v3.0 LAYOUT: GENERAL DESCRIPTION: The www.DataSheet4U.com FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 200 µm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications.