FPD7612 Datasheet | Filtronic Compound Semiconductors

Features : - - - - - 20.5 d Bm Output Power (P1d B) 13 d B Power Gain at 12 GHz 17 d B Maximum Stable Gain at 12 GHz 11 d B Maximum Stable Gain at 18 GHz 45% Power-Added Efficiency Datasheet v3.0 LAYOUT: GENERAL DESCRIPTION: The .. FPD7612 is an Al Ga As/In Ga As pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 200 µm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. TYPICAL APPLICATIONS: - - - - Narrowband and broadband highperformance amplifiers SAT uplink transmitters PCS/Cellular low-voltage high-efficiency output amplifiers Medium-haul digital radio transmitters ELECTRICAL SPECIFICATIONS1: PARAMETER Power at 1d B Gain pression Power Gain at P1d B Noise FIgure Power-Added Efficiency Maximum Stable Gain (S21/S12) f = 12 GHz f = 24 GHz Saturated Drain-Source Current Maximum Drain-Source Current IDSS IMAX VDS = 1.3 V; VGS = 0 V VDS = 1.3 V; VGS ≅ +1 V VDS = 1.3 V; VGS = 0 V VGS = -5 V VDS = 1.3 V; IDS = 0.2 m A IGS = 0.2 m A IGD = 0.2 m A VDS > 3V VDS > 6V 0.7 12.0 14.5 SYMBOL P1d B G1d B N.F. min PAE MSG CONDITIONS VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS VDS = 5V; IDS = 50% IDSS; POUT = P1d B 19 11.0 20.5 13.0 1.2 45 UNITS d Bm d B d B % VDS = 5 V; IDS = 50% IDSS 16 9.5 45 17 11 60 120 75 d B m A m A Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Gate-Drain Breakdown Voltage Thermal Resistivity (see Notes) Thermal Resistivity (see Notes) GM IGSO |VP| |VBDGS| |VBDGD| θJC θJC 80 1 1.0 14.0 16.0 280 20 10 1.3 m S µA V V V °C/W °C/W Note:1 TAmbient = 22°C; RF specifications measured at f = 12 GHz using CW signal Specifications subject to change without notice Filtronic pound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email:...