• Part: FPD7612P70
  • Manufacturer: Filtronic Compound Semiconductors
  • Size: 222.17 KB
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FPD7612P70 Description

AND APPLICATIONS The FPD7612P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 200 µm Schottky barrier Gate, defined by high-resolution stepper-based photolithography. The FPD7612 is also available in die form.