FPD7612P70 datasheet by Filtronic Compound Semiconductors.
| Part number | FPD7612P70 |
|---|---|
| Datasheet | FPD7612P70_FiltronicCompoundSemiconductors.pdf |
| File Size | 222.17 KB |
| Manufacturer | Filtronic Compound Semiconductors |
| Description | HI-FREQUENCY PACKAGED PHEMT |
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AND APPLICATIONS The FPD7612P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 200 µm Schottky barrier Gate, defined by high-resolution stepper-based photolithography. The FPD7612 is also available in die form.
View all Filtronic Compound Semiconductors datasheets
| Part Number | Description |
|---|---|
| FPD7612 | GENERAL PURPOSE PHEMT |
| FPD750 | 0.5W POWER PHEMT |
| FPD750DFN | LOW NOISE HIGH LINEARITY PACKAGED PHEMT |
| FPD750P100 | 0.5W PACKAGED POWER PHEMT |
| FPD750SOT343 | LOW NOISE HIGH LINEARITY PACKAGED PHEMT |
| FPD750SOT89 | LOW NOISE HIGH LINEARITY PACKAGED PHEMT |
| FPD3000 | 2W POWER PHEMT |
| FPD3000P100 | 2W PACKAGED POWER PHEMT |
| FPD3000SOT89 | HIGH LINEARITY PACKAGED PHEMT |
| FPDA200V | HIGH PERFORMANCE PHEMT WITH SOURCE VIAS |
