Datasheet Details
| Part number | FPD750DFN |
|---|---|
| Manufacturer | Filtronic Compound Semiconductors |
| File Size | 610.11 KB |
| Description | LOW NOISE HIGH LINEARITY PACKAGED PHEMT |
| Datasheet |
 FPD750DFN Datasheet
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General Description
The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT).
It utilizes a 0.25 µm x 750 µm Schottky barrier Gate, defined by high-resolution stepperbased photolithography.
Key Features
- (1850MHZ):.
- 24 dBm Output Power (P1dB) 20 dB Small-Signal Gain (SSG) 0.3 dB Noise Figure 39 dBm Output IP3 at 50% Bias 45% Power-Added Efficiency RoHS compliant Datasheet v3.0.