FPD750DFN Datasheet | Filtronic Compound Semiconductors

Features (1850MHZ): - - - - - - 24 d Bm Output Power (P1d B) 20 d B Small-Signal Gain (SSG) 0.3 d B Noise Figure 39 d Bm Output IP3 at 50% Bias 45% Power-Added Efficiency Ro HS pliant Datasheet v3.0 PACKAGE: Ro HS TYPICAL APPLICATIONS: - - - Drivers or output stages in PCS/Cellular base station transmitter amplifiers High intercept-point LNAs WLL and WLAN systems, and other types of wireless infrastructure systems. GENERAL .. DESCRIPTION: The FPD750DFN is a packaged depletion mode Al Ga As/In Ga As pseudomorphic High Electron Mobility Transistor (p HEMT). It utilizes a 0.25 µm x 750 µm Schottky barrier Gate, defined by high-resolution stepperbased photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels. ELECTRICAL SPECIFICATIONS: PARAMETER Power at 1d B Gain pression Small-Signal Gain SYMBOL P1d B SSG CONDITIONS VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS 22.5 19 24 20 UNITS d Bm d B Power-Added Efficiency VDS = 5 V; IDS = 50% IDSS; POUT = P1d B % Noise Figure VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 25% IDSS 0.7...