FPD3000SOT89 Datasheet | Filtronic Compound Semiconductors

DESCRIPTION AND APPLICATIONS The FPD3000SOT89 is a packaged depletion mode Al Ga As/In Ga As pseudomorphic High Electron Mobility Transistor (p HEMT). It utilizes a 0.25 x 3000 µm Schottky barrier Gate, defined by highresolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels. The FPD3000 is available in die form and in other packages. Typical applications include drivers or output stages in PCS/Cellular base station high-interceptpoint LNAs, WLL and WLAN systems, and other types of wireless infrastructure systems. - ELECTRICAL SPECIFICATIONS AT 22°C Parameter Power at 1d B Gain pression Small-Signal Gain Power-Added Efficiency Noise Figure Output Third-Order Intercept Point (from 15 to 5 d B below P1d B) Saturated Drain-Source Current Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Gate-Drain Breakdown Voltage IDSS IMAX GM IGSO |VP| |VBDGS| |VBDGD| Symbol P1d B SSG PAE NF IP3 Test Conditions VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS; POUT = P1d B VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 25% IDSS VDS = 5V; IDS = 50% IDSS Matched for optimal power Matched for best IP3 VDS = 1.3 V; VGS = 0 V VDS = 1.3 V; VGS ≅ +1 V VDS = 1.3 V; VGS = 0 V VGS = -5 V VDS = 1.3 V; IDS = 3 m A IGS = 3 m A IGD = 3 m A 0.7 12 12 750 42 45 930 1.5 800 2 1.0 16 16 Revised: 01/05/05 Email: sales@filcsi. Min 29.5 11.5 Typ 30 13 45 1.3 0.9 Max Units d Bm d B % d B RF SPECIFICATIONS MEASURED AT f = 1850 MHz USING CW SIGNAL d Bm 1100 m A A m S 20 1.3 µA V V V Phone: +1 408 850-5790 Fax: +1 408 850-5766 http:// .filtronic.co.uk/semis LOW NOISE, HIGH LINEARITY PACKAGED PHEMT - ABSOLUTE MAXIMUM RATINGS1 Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate Current RF Input...