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FPD3000SOT89 Datasheet

High Linearity Packaged Phemt

Manufacturer: Filtronic Compound Semiconductors

FPD3000SOT89 Overview

AND APPLICATIONS The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 x 3000 µm Schottky barrier Gate, defined by highresolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias...

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