FPD3000P100 Description
AND APPLICATIONS The FPD3000P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 3000 µm Schottky barrier gate, defined by highresolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications.
FPD3000P100 Key Features
- 32.5 dBm Linear Output Power
- 17 dB Power Gain at 2 GHz
- 9.5 dB Maximum Stable Gain at 10 GHz
- 42 dBm Output IP3
- 45% Power-Added Efficiency at 2 GHz
- DESCRIPTION AND