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FPD3000 - 2W POWER PHEMT

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Part number FPD3000
Manufacturer Filtronic Compound Semiconductors
File Size 213.66 KB
Description 2W POWER PHEMT
Datasheet download datasheet FPD3000 Datasheet
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AND APPLICATIONS DIE SIZE (µm): 830 x 470 DIE THICKNESS: 75 µm BONDING PADS (µm): >75 x 60 The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 3000 µm Schottky barrier gate, defined by high-resolution stepper-based photolithography.The recessed and offset Gate structure minimizes parasitics to optimize performance.The epitaxial structure and processing have been optimized for reliable high-power applications.The FPD3000 also featur

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