FPD3000 Overview
AND APPLICATIONS DIE SIZE (µm): >75 x 60 The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 3000 µm Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance.
FPD3000 Key Features
- 32.5 dBm Linear Output Power at 12 GHz
- 6.5 dB Power Gain at 12 GHz
- 8 dB Maximum Stable Gain at 12 GHz
- 42 dBm Output IP3
- 30% Power-Added Efficiency
- DESCRIPTION AND