FPD3000P100 phemt equivalent, 2w packaged power phemt.
* 32.5 dBm Linear Output Power
* 17 dB Power Gain at 2 GHz
* 9.5 dB Maximum Stable Gain at 10 GHz
* 42 dBm Output IP3
* 45% Power-Added Efficiency at .
The FPD3000P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm.
AND APPLICATIONS The FPD3000P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 3000 µm Schottky barrier gate, defined by highresolution stepper-based photolithography. The recessed and off.
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