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FPD3000P100 Datasheet 2W PACKAGED POWER PHEMT

Manufacturer: Filtronic Compound Semiconductors

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Datasheet Details

Part number FPD3000P100
Manufacturer Filtronic Compound Semiconductors
File Size 212.32 KB
Description 2W PACKAGED POWER PHEMT
Datasheet download datasheet FPD3000P100 Datasheet

General Description

AND APPLICATIONS The FPD3000P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 3000 µm Schottky barrier gate, defined by highresolution stepper-based photolithography.

The recessed and offset Gate structure minimizes parasitics to optimize performance.

The epitaxial structure and processing have been optimized for reliable high-power applications.

Overview

www.DataSheet4U.com 2W PACKAGED POWER PHEMT •.

Key Features

  • S.
  • 32.5 dBm Linear Output Power.
  • 17 dB Power Gain at 2 GHz.
  • 9.5 dB Maximum Stable Gain at 10 GHz.
  • 42 dBm Output IP3.
  • 45% Power-Added Efficiency at 2 GHz FPD3000P100.

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