FIR3441AG - P-Channel Enhancement Mode Power MOSFET

Description

The FIR3441AG uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

VDS = -30V,ID = -4.4A RDS(ON) < 65mΩ @ VGS=-4.5V RDS(ON) < 50mΩ @ VGS=-10V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

First Semiconductor

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Datasheet Details

Part number	FIR3441AG
Manufacturer	First Semiconductor
File Size	1.42 MB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	FIR3441AG Datasheet
Additional preview pages of the FIR3441AG datasheet.

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Full PDF Text Transcription

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P-Channel Enhancement Mode Power MOSFET Description The FIR3441AG uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features • VDS = -30V,ID = -4.4A RDS(ON) < 65mΩ @ VGS=-4.

Published: May 22, 2015 |