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AO8801A Datasheet P-Channel MOSFET

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

General Description

The AO8801A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

Overview

AO8801A 20V P-Channel MOSFET General.

Key Features

  • VDS ID (at VGS=-10V) RDS(ON) (at VGS= -4.5V) RDS(ON) (at VGS= -2.5V) RDS(ON) (at VGS= -1.8V) -20V -4.5A < 42mΩ < 54mΩ < 68mΩ D1 D2 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 G2 S1 S2 C unless otherwise noted Absolute Maximum Ratings TA=25° Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation B C Maximum -20 ±8 -4.5 -3.6 -30 1.5 0.96 -55 to 150 Units V V A VGS TA=25° C C TA=70° TA=25° C C TA=70° ID IDM PD.