AO8801 - Dual P-Channel Enhancement Mode Field Effect Transistor

Alpha & Omega Semiconductors

Datasheet Details

Part number	AO8801
Manufacturer	Alpha & Omega Semiconductors
File Size	139.27 KB
Description	Dual P-Channel Enhancement Mode Field Effect Transistor
Datasheet	AO8801_AlphaOmegaSemiconductors.pdf

The AO8801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

VDS (V) = -20V ID = -4.7 A (V GS = -4.5V) RDS(ON) < 42mΩ (VGS = -4.5V) RDS(ON) < 53mΩ (VGS = -2.5V) RDS(ON) < 70mΩ (VGS = -1.8V) ESD Rating: 3000V HBM TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 D D2 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -20 ±8 -4.7 -3.7 -30 1.4 0.9 -55 to 150 Units V V A TA=25°C TA=70°C.

📁 AO8801 Similar Datasheet

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Other Datasheets by Alpha & Omega Semiconductors

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AO8810 - 20V Common-Drain Dual N-Channel MOSFET
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Published: Aug 29, 2009 |