Datasheet Details
| Part number | AO8820 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 200.15 KB |
| Description | 20V Common-Drain Dual N-Channel MOSFET |
| Download | AO8820 Download (PDF) |
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| Part number | AO8820 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 200.15 KB |
| Description | 20V Common-Drain Dual N-Channel MOSFET |
| Download | AO8820 Download (PDF) |
|
|
|
Product Summary The AO8820 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.
It is ESD protected.
This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.
AO8820 20V Common-Drain Dual N-Channel MOSFET General.
| Part Number | Description |
|---|---|
| AO8822 | 20V Common-Drain Dual N-Channel MOSFET |
| AO8801 | Dual P-Channel Enhancement Mode Field Effect Transistor |
| AO8801A | 20V P-Channel MOSFET |
| AO8803 | Dual P-Channel Enhancement Mode Field Effect Transistor |
| AO8807 | Dual P-Channel FET |
| AO8808 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO8808A | 20V Dual N-Channel MOSFET |
| AO8810 | 20V Common-Drain Dual N-Channel MOSFET |
| AO8814 | 20V Common-Drain Dual N-Channel MOSFET |
| AO8816 | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |