Datasheet Details
| Part number | AO8822 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 336.66 KB |
| Description | 20V Common-Drain Dual N-Channel MOSFET |
| Download | AO8822 Download (PDF) |
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Overview: AO8822 20V Common-Drain Dual N-Channel MOSFET General.
| Part number | AO8822 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 336.66 KB |
| Description | 20V Common-Drain Dual N-Channel MOSFET |
| Download | AO8822 Download (PDF) |
|
|
|
Product Summary The AO8822 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.
This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its common-drain configuration.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 3.6V) RDS(ON) (at VGS = 2.5V) ESD Protected 20V 7A < 18mW < 22mW < 23mW < 27mW TSSOP8 D Top View Bottom View Pin 1 D1/D2 1 S1 2 S1 3 G1 4 8 D1/D2 7 S2 6 5 S2 G G2 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±12 7 6 30 1.5 1 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 63 101 Maximum Junction-to-Lead Steady-State RqJL 64 Max 83 130 83 D S Units V V A W °C Units °C/W °C/W °C/W Rev 6.1 : August 2023 www.aosmd.com Page 1 of 5 AO8822 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 20 V IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V TJ=55°C 1 mA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±10V 10 mA BVGSO Gate-Source Breakdown Voltage VDS=0V, IG=±250mA ±12 V VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 0.5 0.8 1 V ID(ON) On state drain current VGS=10V, VDS=5V 30 A VGS=10V, ID=7A 13 15 18 mW TJ=125°C 22 27 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=6.6A VGS=3.6V, ID=6A 15 17 22 mW 16 18 23 mW VGS=2.5V, ID=5.5A 1
| Part Number | Description |
|---|---|
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