AO8800 transistor equivalent, common-drain dual n-channel enhancement mode field effect transistor.
VDS (V) = 30V ID = 6.4A RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) RDS(ON) < 40mΩ (VGS = 2.5V) RDS(ON) < 70mΩ (VGS = 1.8V)
TSSOP-8 Top View D1/D2 S1 S1 G1 1 .
The AO8800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional loa.
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