AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor

Alpha & Omega Semiconductors

Description

www.DataSheet4U.com AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor General .
The AO8801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

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Datasheet Specifications

Part number: AO8801
Manufacturer: Alpha & Omega Semiconductors
File Size: 139.27 KB
Datasheet: AO8801_AlphaOmegaSemiconductors.pdf
Description: Dual P-Channel Enhancement Mode Field Effect Transistor

Features

* VDS (V) = -20V ID = -4.7 A (V GS = -4.5V) RDS(ON) < 42mΩ (VGS = -4.5V) RDS(ON) < 53mΩ (VGS = -2.5V) RDS(ON) < 70mΩ (VGS = -1.8V) ESD Rating: 3000V HBM TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 D D2 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symb

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AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors

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