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AO8801 Datasheet - Alpha & Omega Semiconductors

AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor

The AO8801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO8801 is Pbfree (meets ROHS & Sony 259 specificati.

AO8801 Features

* VDS (V) = -20V ID = -4.7 A (V GS = -4.5V) RDS(ON) < 42mΩ (VGS = -4.5V) RDS(ON) < 53mΩ (VGS = -2.5V) RDS(ON) < 70mΩ (VGS = -1.8V) ESD Rating: 3000V HBM TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 D D2 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symb

AO8801_AlphaOmegaSemiconductors.pdf

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Datasheet Details

Part number:

AO8801

Manufacturer:

Alpha & Omega Semiconductors

File Size:

139.27 KB

Description:

Dual p-channel enhancement mode field effect transistor.

AO8801 Distributor

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AO8801 AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors