AO8801 - Dual P-Channel Enhancement Mode Field Effect Transistor
The AO8801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.
This device is suitable for use as a load switch or in PWM applications.
It is ESD protected.
Standard Product AO8801 is Pbfree (meets ROHS & Sony 259 specificati
AO8801 Features
* VDS (V) = -20V ID = -4.7 A (V GS = -4.5V) RDS(ON) < 42mΩ (VGS = -4.5V) RDS(ON) < 53mΩ (VGS = -2.5V) RDS(ON) < 70mΩ (VGS = -1.8V) ESD Rating: 3000V HBM TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 D D2 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symb
