AO8801 - Dual P-Channel Enhancement Mode Field Effect Transistor

Product Overview

Alpha & Omega Semiconductors

Part number	AO8801
Manufacturer	Alpha & Omega Semiconductors
File Size	139.27 KB
Description	Dual P-Channel Enhancement Mode Field Effect Transistor
Datasheet	AO8801 Datasheet
Additional preview pages of the AO8801 datasheet.

The AO8801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

VDS (V) = -20V ID = -4.7 A (V GS = -4.5V) RDS(ON) < 42mΩ (VGS = -4.5V) RDS(ON) < 53mΩ (VGS = -2.5V) RDS(ON) < 70mΩ (VGS = -1.8V) ESD Rating: 3000V HBM TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 D D2 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -20 ±8 -4.7 -3.7 -30 1.4 0.9 -55 to 150 Units V V A TA=25°C TA=70°C.

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Other Datasheets by Alpha & Omega Semiconductors

AO8803 - Dual P-Channel Enhancement Mode Field Effect Transistor
AO8808 - Dual N-Channel Enhancement Mode Field Effect Transistor
AO8810 - 20V Common-Drain Dual N-Channel MOSFET
AO8814 - 20V Common-Drain Dual N-Channel MOSFET
AO8816 - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO8818 - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

Published: Aug 29, 2009 |