AO8801 - Dual P-Channel FET
The AO8801 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V.
This device is suitable for use as a load switch or in PWM applications.
It is ESD protected.
Standard Product AO8801 is Pb- free (meets ROHS & Sony 259 specific
AO8801 Features
* VDS (V) = -20V ID = -4.7 A (V GS = -4.5V) RDS(ON) < 42mΩ (VGS = -4.5V) RDS(ON) < 53mΩ (VGS = -2.5V) RDS(ON) < 70mΩ (VGS = -1.8V) ESD Rating: 3000V HBM TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 D D2 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symb
