AO8807 - Dual P-Channel FET

Name: AO8807
SKU: AO8807-735004

FreesCale

Datasheet Details

The AO8807 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V.

VDS (V) = -12V ID = -6.5 A (VGS = -4.5V) RDS(ON) < 20mΩ (VGS = -4.5V) RDS(ON) < 24mΩ (VGS = -2.5V) RDS(ON) < 30mΩ (VGS = -1.8V) D1 TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 Rg Rg D2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation B C Maximum -12 ±8 -6.5 -5 -60 1.4 0.9 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID.

📁 AO8807 Similar Datasheet

AO8800 - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor (ALPHA)
AO8801 - Dual P-Channel MOSFET (VBsemi)
AO8802 - Dual N-Channel MOSFET (ETC)
AO8803 - Dual P-Channel Enhancement Mode Field Effect Transistor (Alpha & Omega Semiconductors)
AO8804 - Dual N-Channel MOSFET (ETC)
AO8806 - Dual N-Channel MOSFET (ETC)
AO8808 - Dual N-Channel Enhancement Mode Field Effect Transistor (Alpha & Omega Semiconductors)
AO8808A - Dual N-Channel MOSFET (VBsemi)

Other Datasheets by FreesCale

Published: Aug 19, 2013 |