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MMG3012NT1 Datasheet Heterojunction Bipolar Transistor

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3012NT1 is a general purpose amplifier that is internally input matched and internally output matched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF.

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Key Features

  • Frequency: 0--6000 MHz.
  • P1dB: 18.5 dBm @ 900 MHz.
  • Small--Signal Gain: 19 dB @ 900 MHz.
  • Third Order Output Intercept Point: 34 dBm @ 900 MHz.
  • Single 5 V Supply.
  • Internally Matched to 50 Ohms.
  • Cost--effective SOT--89 Surface Mount Plastic Package.
  • In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. Document Number: MMG3012NT1 Rev. 8, 9/2014 MMG3012NT1 0--6000 MHz, 19 dB 18.5 dBm InGaP HBT GPA SOT--89 Table 1. Typical Performance (1).

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